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Scientific article
English

High-Pressure Synthesis and Characterization of β-GeSe-A Six-Membered-Ring Semiconductor in an Uncommon Boat Conformation

Published inJournal of the American Chemical Society, vol. 139, no. 7, p. 2771-2777
Publication date2017-02-13
First online date2017-02-13
Abstract

Two-dimensional materials have significant potential for the development of new devices. Here we report the electronic and structural properties of β-GeSe, a previously unreported polymorph of GeSe, with a unique crystal structure that displays strong two-dimensional structural features. β-GeSe is made at high pressure and temperature and is stable under ambient conditions. We compare it to its structural and electronic relatives α-GeSe and black phosphorus. The β form of GeSe displays a boat conformation for its Ge-Se six-membered ring (“six-ring”), while the previously known α form and black phosphorus display the more common chair conformation for their six-rings. Electronic structure calculations indicate that β-GeSe is a semiconductor, with an approximate bulk band gap of Δ ≈ 0.5 eV, and, in its monolayer form, Δ ≈ 0.9 eV. These values fall between those of α-GeSe and black phosphorus, making β-GeSe a promising candidate for future applications. The resistivity of our β-GeSe crystals measured in-plane is on the order of ρ ≈ 1 Ω·cm, while being essentially temperature independent.

eng
Keywords
  • Conformation
  • Crystal structure
  • Electrical conductivity
  • Electronic structure
  • Phosphorus
Affiliation Not a UNIGE publication
Research group
Citation (ISO format)
VON ROHR, Fabian et al. High-Pressure Synthesis and Characterization of β-GeSe-A Six-Membered-Ring Semiconductor in an Uncommon Boat Conformation. In: Journal of the American Chemical Society, 2017, vol. 139, n° 7, p. 2771–2777. doi: 10.1021/jacs.6b12828
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ISSN of the journal0002-7863
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