Doctoral thesis
Open access

Optoelectronic Phenomena in 2D Materials and Heterostructures

Number of pages148
Imprimatur date2022-05-31
Defense date2022-05-30

2-dimensional (2D) materials have stunned the scientific community and have triggered immense interest due to their unique optoelectronic properties. These properties strongly depend on the thickness of 2D layers and can be controlled by an externally applied voltage providing experimental “knobs” for property tuning. Possibilities of engineering properties by design expand when 2D materials are reassembled into heterostructures in a vertical stack. This thesis is devoted to novel optoelectronic phenomena in 2D materials and heterostructures. Here, we first solve obstacles with lattice mismatch and misalignment in van der Waals interfaces for efficient broad-spectrum optoelectronics. Then, we provide pathways to detect and identify different 2D layers when conventional techniques fail. Finally, we realize double ionic gated devices that enable the application of colossal electric fields to tune the band structure of atomically thin layers on the unprecedented eV scale.

  • 2D materials
  • Van der Waals Heterostructures
  • Optoelectronics
  • TMD
  • MoS2
  • WSe2
  • Ionic gating
  • Optics
  • Transport
  • Atomically thin layers
Research group
Citation (ISO format)
DOMARETSKIY, Daniil. Optoelectronic Phenomena in 2D Materials and Heterostructures. 2022. doi: 10.13097/archive-ouverte/unige:161570
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Technical informations

Creation06/15/2022 1:09:00 PM
First validation06/15/2022 1:09:00 PM
Update time07/24/2023 11:35:46 AM
Status update07/24/2023 11:35:46 AM
Last indexation10/19/2023 6:16:46 PM
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