Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices

Guimaraes Couto, Nuno Jose; Costanzo, Davide; Engels, Stephan; Ki, Dongkeun; Watanabe, Kenji; Taniguchi, Takashi; Stampfer, Christoph; Guinea, Francisco; Morpurgo, Alberto

doi:10.1103/PhysRevX.4.041019

Scientific article

English

Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices

ContributorsGuimaraes Couto, Nuno Jose; Costanzo, Davide; Engels, Stephan; Ki, Dongkeun; Watanabe, Kenji; Taniguchi, Takashi; Stampfer, Christoph; Guinea, Francisco; Morpurgo, Alberto

Published inPhysical review. X, vol. 4, no. 4, 041019

Publication date2014-10-30

First online date2014-10-30

Abstract

Affiliation entities

Faculté des sciences / Section de physique / Département de physique de la matière quantique
Faculté des sciences / Section de physique / Groupe de physique appliquée

Research groups

Groupe Morpurgo

Funding

European Commission - Novel uses for graphene [290846]
European Commission - Graphene Quantum Electromechanical Systems [280140]

Citation (ISO format)

GUIMARAES COUTO, Nuno Jose et al. Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices. In: Physical review. X, 2014, vol. 4, n° 4, p. 041019. doi: 10.1103/PhysRevX.4.041019

Article (Published version)

CC BY

Identifiers

PID : unige:156190
DOI : 10.1103/PhysRevX.4.041019

Additional URL for this publicationhttps://link.aps.org/doi/10.1103/PhysRevX.4.041019

Journal ISSN2160-3308

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Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices

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