Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe<sub>2</sub>

Gutierrez Lezama, Ignacio; Arora, Ashish; Ubaldini, Alberto; Barreteau, Céline; Giannini, Enrico; Potemski, Marek; Morpurgo, Alberto

doi:10.1021/nl5045007

Scientific article

English

Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe₂

ContributorsGutierrez Lezama, Ignacio; Arora, Ashish; Ubaldini, Alberto; Barreteau, Céline; Giannini, Enrico

; Potemski, Marek; Morpurgo, Alberto

Published inNano letters, vol. 15, no. 4, p. 2336-2342

Publication date2015-03-27

First online date2015-03-27

Abstract

Keywords

2D crystals
Molybdenum ditelluride
Band gap crossover
Exciton and trion
Photoluminescence
Reflectance
Semiconducting transition metal dichalcogenides

Affiliation

Research group

Groupe Morpurgo

Citation (ISO format)

GUTIERREZ LEZAMA, Ignacio et al. Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe<sub>2</sub>. In: Nano letters, 2015, vol. 15, n° 4, p. 2336–2342. doi: 10.1021/nl5045007

Article (Published version)

Identifiers

PID : unige:156131
DOI : 10.1021/nl5045007
PMID : 25803208

Commercial URLhttps://pubs.acs.org/doi/10.1021/nl5045007

ISSN of the journal1530-6984

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Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2

Technical informations

Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe₂