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Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

Published inApplied physics letters, vol. 86, no. 3, 032103
Publication date2005-01-17
Affiliation Not a UNIGE publication
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Citation (ISO format)
DE BOER, R. W. I. et al. Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors. In: Applied physics letters, 2005, vol. 86, n° 3, p. 032103. doi: 10.1063/1.1852089
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ISSN of the journal0003-6951
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