Scientific article
Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors
Contributorsde Boer, R. W. I.; Iosad, N. N.; Stassen, A. F.; Klapwijk, T. M.; Morpurgo, Alberto
Published inApplied physics letters, vol. 86, no. 3, 032103
Publication date2005-01-17
Affiliation entities Not a UNIGE publication
Research groups
Citation (ISO format)
DE BOER, R. W. I. et al. Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors. In: Applied physics letters, 2005, vol. 86, n° 3, p. 032103. doi: 10.1063/1.1852089
Main files (1)
Article (Published version)
Identifiers
- PID : unige:156122
- DOI : 10.1063/1.1852089
Additional URL for this publicationhttp://aip.scitation.org/doi/10.1063/1.1852089
Journal ISSN0003-6951
