Gate-induced insulating state in bilayer graphene devices
Published inNature materials, vol. 7, no. 2, p. 151-157
Publication date2007-12-02
First online date2007-12-02
Affiliation entities Not a UNIGE publication
Research groups
Citation (ISO format)
OOSTINGA, Jeroen B. et al. Gate-induced insulating state in bilayer graphene devices. In: Nature materials, 2007, vol. 7, n° 2, p. 151–157. doi: 10.1038/nmat2082
Main files (1)
Article (Published version)
Identifiers
- PID : unige:156110
- DOI : 10.1038/nmat2082
- PMID : 18059274
Additional URL for this publicationhttp://www.nature.com/articles/nmat2082
Journal ISSN1476-1122
