Scientific article
Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors
ContributorsStassen, A. F.; de Boer, R. W. I.; Iosad, N. N.; Morpurgo, Alberto
Published inApplied physics letters, vol. 85, no. 17, p. 3899-3901
Publication date2004-10-25
Affiliation entities Not a UNIGE publication
Research groups
Citation (ISO format)
STASSEN, A. F. et al. Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors. In: Applied physics letters, 2004, vol. 85, n° 17, p. 3899–3901. doi: 10.1063/1.1812368
Main files (1)
Article (Published version)
Identifiers
- PID : unige:156006
- DOI : 10.1063/1.1812368
Additional URL for this publicationhttp://aip.scitation.org/doi/10.1063/1.1812368
Journal ISSN0003-6951
