We present a detailed temperature and frequency dependence of the optical conductivity measured on clean high quality single crystals of URu2Si2 of ac- and ab-plane surfaces. Our data demonstrate the itinerant character of the narrow 5f bands, becoming progressively coherent as temperature is lowered below a cross-over temperature T∗∼75K. T∗is higher than in previous reports as a result of a different sample preparation, which minimizes residual strain. We furthermore present the density-response (energy-loss) function of this compound, and determine the energies of the heavy fermion plasmons witha-andc-axis polarization. Our observation of a suppression of optical conductivity below 50 meV both alongaandc-axis, along with a heavy fermion plasmon at 18 meV, points toward the emergence of a band of coherent charge carriers crossing the Fermi energy and the emergence of a hybridization gap on part of the Fermi surface. The evolution towards coherent itinerant states is accelerated below the hidden order temperature THO= 17.5K. In the hidden order phase the low frequency optical conductivity shows a single gap at∼6.5 meV, which closes at THO.