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Physics of thin-film ferroelectric oxides

Contributors

Dawber, Matthew; Rabe, K. M.; Scott, J. F.

Published in

Reviews of Modern Physics, vol. 77, no. 4, p. 1083-1130

Publication date

2005

Abstract

This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this the review covers the enormous progress that has been made in the first-principles computational approach to understanding ferroelectrics. The authors then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, this review ends with a look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in nonconventional nanoscale geometries.

UNIGE affiliation entities

Citation (ISO format)

DAWBER, Matthew, RABE, K. M., SCOTT, J. F. Physics of thin-film ferroelectric oxides. In: Reviews of Modern Physics, 2005, vol. 77, n° 4, p. 1083–1130. doi: 10.1103/RevModPhys.77.1083

Main files (1)

Article (Published version)

Identifiers

Additional URL for this publication

https://link.aps.org/doi/10.1103/RevModPhys.77.1083

Journal ISSN

0034-6861
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2094downloads

Technical informations

Creation

11/11/2019 13:01:00

First validation

11/11/2019 13:01:00

Update

15/03/2023 18:23:22

Status update

15/03/2023 18:23:21

Last indexation

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