UNIGE document Scientific Article
previous document  unige:121519  next document
add to browser collection

High sensitivity variable-temperature infrared nanoscopy of conducting oxide interfaces

Authors show hidden authors show all authors [1 - 9]
Published in Nature Communications. 2019, vol. 10, no. 2774
Abstract Probing the local transport properties of two-dimensional electron systems (2DES) confined at buried interfaces requires a non-invasive technique with a high spatial resolution operating in a broad temperature range. In this paper, we investigate the scattering-type scanning near field optical microscopy as a tool for studying the conducting LaAlO3/SrTiO3 interface from room temperature down to 6 K. We show that the near-field optical signal, in particular its phase component, is highly sensitive to the transport properties of the electron system present at the interface. Our modelling reveals that such sensitivity originates from the interaction of the AFM tip with coupled plasmon–phonon modes with a small penetration depth. The model allows us to quantitatively correlate changes in the optical signal with the variation of the 2DES transport properties induced by cooling and by electrostatic gating. To probe the spatial resolution of the technique, we image conducting nano-channels written in insulating heterostructures with a voltage-biased tip of an atomic force microscope.
Keywords Thin filmsOxidesLaAlO3/SrTiO3Near-field optical scanning microscope
Full text
Article (Published version) (1.1 MB) - public document Free access
Supplemental data (2 MB) - public document Free access
Other version: http://www.nature.com/articles/s41467-019-10672-5
Research groups Groupe Kuzmenko
Groupe Triscone
Groupe Van der Marel
(ISO format)
LUO, Weiwei et al. High sensitivity variable-temperature infrared nanoscopy of conducting oxide interfaces. In: Nature Communications, 2019, vol. 10, n° 2774. doi: 10.1038/s41467-019-10672-5 https://archive-ouverte.unige.ch/unige:121519

381 hits



Deposited on : 2019-08-12

Export document
Format :
Citation style :