Acceptor energy levels in GaAs/AlGaAs quantum wells in the presence of an external magnetic field
ContributorsZhao, Q.X.; Holtz, P.O.; Pasquarello, Alfredo; Monemar, B.; Willander, M.
Presented atVancouver, August 15-19, 1994
Published inLockwood, David J. (Ed.), 22nd International Conference on the Physics of Semiconductors, vol. 3, p. 2283-2286
PublisherSingapore : World Scientific
Publication date1995
Abstract
Affiliation entities Not a UNIGE publication
Citation (ISO format)
ZHAO, Q.X. et al. Acceptor energy levels in GaAs/AlGaAs quantum wells in the presence of an external magnetic field. In: 22nd International Conference on the Physics of Semiconductors, vol. 3. Lockwood, David J. (Ed.). Vancouver. Singapore : World Scientific, 1995. p. 2283–2286.
Main files (1)
Proceedings chapter (Published version)
Identifiers
- PID : unige:120904