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Acceptor energy levels in GaAs/AlGaAs quantum wells in the presence of an external magnetic field

Presented atVancouver, August 15-19, 1994
Published inLockwood, David J. (Ed.), 22nd International Conference on the Physics of Semiconductors, vol. 3, p. 2283-2286
PublisherSingapore : World Scientific
Publication date1995
Abstract

Energy levels of ground- and excited shallow acceptor states in quantum wells (QWs) have been calculated in the presence of an external magnetic field within a four-band effective-mass theory, in which the valence-band mixing as well as the mismatch of the band parameters and the dielectric constants between well and barrier materials have been taken into account. The energy separations between the ground and different excited acceptor states are deduced at various magnetic fields. The g-factors of the acceptor 1S3/2 ground states and the 2P3/2 excited states are obtained for QWs with different well widths. The oscillator strengths of the acceptor infrared transitions in QWs corresponding to the G, D, and C lines of acceptors in bulk GaAs have also been calculated vs magnetic field up to 10 T.

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Citation (ISO format)
ZHAO, Q.X. et al. Acceptor energy levels in GaAs/AlGaAs quantum wells in the presence of an external magnetic field. In: 22nd International Conference on the Physics of Semiconductors, vol. 3. Lockwood, David J. (Ed.). Vancouver. Singapore : World Scientific, 1995. p. 2283–2286.
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