First-Principles Study of Microscopic Models of the Si(001)-SiO2 interface
ContributorsPasquarello, Alfredo; Hybertsen, Mark S.; Car, Roberto
Presented atVancouver, August 15-19, 1994
Published inLockwood, David J. (Ed.), 22nd International Conference on the Physics of Semiconductors, vol. 1, p. 612-615
PublisherSingapore : World Scientific
Publication date1995
Abstract
Affiliation entities
Citation (ISO format)
PASQUARELLO, Alfredo, HYBERTSEN, Mark S., CAR, Roberto. First-Principles Study of Microscopic Models of the Si(001)-SiO2 interface. In: 22nd International Conference on the Physics of Semiconductors, vol. 1. Lockwood, David J. (Ed.). Vancouver. Singapore : World Scientific, 1995. p. 612–615.
Main files (1)
Proceedings chapter (Published version)
Identifiers
- PID : unige:117896
ISBN981022978X