Scientific article
Open access

Epitaxial growth of multiferroic YMnO3 on GaN

Published inApplied Physics Letters, vol. 87, no. 17, 171915
Publication date2005

In this work, we report on the epitaxial growth of multiferroic YMnO3 on GaN. Both materials are hexagonal with a nominal lattice mismatch of 4%, yet x-ray diffraction reveals an unexpected 30 degrees rotation between the unit cells of YMnO3 and GaN that results in a much larger lattice mismatch (10%) compared to the unrotated case. Estimates based on first principles calculations show that the bonding energy gained from the rotated atomic arrangement compensates for the increase in strain energy due to the larger lattice mismatch. Understanding the energy competition between chemical bonding energy and strain energy provides insight into the heteroepitaxial growth mechanisms of complex oxide-semiconductor systems.

Research group
Citation (ISO format)
POSADAS, A. et al. Epitaxial growth of multiferroic YMnO<sub>3</sub> on GaN. In: Applied Physics Letters, 2005, vol. 87, n° 17, p. 171915. doi: 10.1063/1.2120903
Main files (1)
Article (Published version)
ISSN of the journal0003-6951

Technical informations

Creation02/12/2019 5:14:00 PM
First validation02/12/2019 5:14:00 PM
Update time03/15/2023 3:45:33 PM
Status update03/15/2023 3:45:32 PM
Last indexation05/03/2024 7:16:28 AM
All rights reserved by Archive ouverte UNIGE and the University of GenevaunigeBlack