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Growth of single unit-cell superconducting La2−xSrxCuO4 films

Rüfenacht, A.
Chappatte, P.
Leemann, C.
Fompeyrine, J.
Locquet, J.-P.
Martinoli, P.
Published in Solid-state electronics. 2003, vol. 47, no. 12, p. 2167-2170
Abstract We have developed an approach to grow high quality ultra-thin films of La2-xSrxCuO4 with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La1.9Sr0.1CuO4 film. The main result of our work is that a single unit cell (only two copper oxide planes) grown on a SrLaAlO4 substrate exhibits a superconducting transition at 12.5 K (zero resistance) and an in-plane magnetic penetration depth lambda(ab)(0) = 535 nm.
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Research group Groupe Triscone
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RÜFENACHT, A. et al. Growth of single unit-cell superconducting La2−xSrxCuO4 films. In: Solid-state Electronics, 2003, vol. 47, n° 12, p. 2167-2170. doi: 10.1016/S0038-1101(03)00191-6 https://archive-ouverte.unige.ch/unige:114268

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Deposited on : 2019-02-13

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