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Hall effect in underdoped GdBa2Cu3O7-delta thin films: Evidence for a crossover line in the pseudogap regime

Published inPhysical Review. B, Condensed Matter, vol. 64, no. 2, 024513
Publication date2001
Abstract

We report on measurements of the resistivity and Hall coefficient in underdoped GdBa2Cu3O7-delta epitaxial thin films grown by off-axis magnetron sputtering. The films have been lithographically patterned allowing precise measurements of the temperature dependencies of the inverse Hall constant R-H(-1) and of the Hall angle theta (H). We find that R-H(-1) is linear in temperature between 300 K and the pseudogap temperature T*, whereas cot(theta (H)) displays a perfect T-2 temperature dependence typically between 300 and 100 K. We observe for all the samples that the temperature at which the temperature dependence of cot(theta (H)) deviates from the T-2 behavior is correlated to the temperature at which R-H displays a peak. This characteristic temperature, found to lie between T-c and T*, does not depend markedly on the doping level and defines a crossover line in the temperature versus doping phase diagram. We tentatively relate these findings to recent high-frequency conductivity and Nernst effect experimental results, and we briefly discuss the possible consequences fur competing theories fur the pseudogap state of the cuprates.

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MATTHEY, Daniel et al. Hall effect in underdoped GdBa2Cu3O7-delta thin films: Evidence for a crossover line in the pseudogap regime. In: Physical Review. B, Condensed Matter, 2001, vol. 64, n° 2, p. 024513. doi: 10.1103/PhysRevB.64.024513
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Additional URL for this publicationhttps://link.aps.org/doi/10.1103/PhysRevB.64.024513
Journal ISSN1098-0121
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