Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
Published inNature Communications, vol. 9, no. 2516
Publication date2018
Abstract
Keywords
- 2D materials
- Magnetism
- Magnetoresistance
- Magnetotunneling
Research group
Funding
- Swiss National Science Foundation - NCCR QSIT
- Autre - graphene Flagship
Citation (ISO format)
WANG, Zhe et al. Very large tunneling magnetoresistance in layered magnetic semiconductor CrI<sub>3</sub>. In: Nature Communications, 2018, vol. 9, n° 2516. doi: 10.1038/s41467-018-04953-8
Secondary files (1)
Identifiers
- PID : unige:106067
- DOI : 10.1038/s41467-018-04953-8
Commercial URLhttp://www.nature.com/articles/s41467-018-04953-8
ISSN of the journal2041-1723