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Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3

Kroner, Martin
Taniguchi, Takashi
Watanabe, Kenji
Imamoğlu, Ataç
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Published in Nature communications. 2018, vol. 9, no. 2516
Abstract Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in semiconductors is the interplay between magnetism and transport, which has remained unexplored. Here we report magneto-transport measurements on exfoliated CrI3 crystals. We find that tunneling conduction in the direction perpendicular to the crystalline planes exhibits a magnetoresistance as large as 10,000%. The evolution of the magnetoresistance with magnetic field and temperature reveals that the phenomenon originates from multiple transitions to different magnetic states, whose possible microscopic nature is discussed on the basis of all existing experimental observations. This observed dependence of the conductance of a tunnel barrier on its magnetic state is a phenomenon that demonstrates the presence of a strong coupling between transport and magnetism in magnetic van der Waals semiconductors.
Keywords 2D materialsMagnetismMagnetoresistanceMagnetotunneling
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Other version: http://www.nature.com/articles/s41467-018-04953-8
Research groups Groupe Morpurgo
Groupe Van der Marel
Swiss National Science Foundation: NCCR QSIT
Autre: graphene Flagship
(ISO format)
WANG, Zhe et al. Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3. In: Nature Communications, 2018, vol. 9, n° 2516. doi: 10.1038/s41467-018-04953-8 https://archive-ouverte.unige.ch/unige:106067

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Deposited on : 2018-07-03

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