Positron Polarisation in Semiconductors from LDA

Article Article scientifique Article Positron Polarisation in Semiconductors from LDA eng 1992 author Rojas Hortensia 589521 author Barbiellini-Amidei Bernardo Gaetano 23399 author Jarlborg Thomas N. 21983 799-802 10.4028/www.scientific.net/MSF.105-110.799 0255-5476 https://www.scientific.net/MSF.105-110.799 The correlation potential, felt by a positron diffusing in some semiconductors and produced by polarisation cloud around the positron, is evaluated in the local density approximation (LDA). The electronic and the positronic structures are obtained using both pseudopotential and LMTO methods. The effects of LDA correlation potential agree well with the calculations beyond LDA by Pennetta and Baldereschi. Finally, the lifetimes are calculated using the annihilation enhancement factors. Dewey 500.2 33 Département de physique de la matière quantique 131 false Materials Science Forum 105-110 9f1ec897-89f4-4c28-b046-34dac509d9ae Article (Published version) Restricted Rojas_MSF_1992105799.pdf 1338239 application/pdf restrictedAccess Faculté des sciences / Section de physique / Département de physique de la matière quantique

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Positron Polarisation in Semiconductors from LDA	Materials Science Forum			1992	391	0

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