Switching on and off the spin polarization of the conduction band in antiferromagnetic bilayer transistors

Article Article scientifique Article Switching on and off the spin polarization of the conduction band in antiferromagnetic bilayer transistors eng 2025-03-11 author Yao Fengrui 0000-0003-3754-0628 Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland. fengrui.yao@unige.ch.,Group of Applied Physics, University of Geneva, Geneva, Switzerland. fengrui.yao@unige.ch. 944537 Département de physique de la matière quantique (FIMAC) author Liao Menghan 0000-0001-9108-3013 Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.,Group of Applied Physics, University of Geneva, Geneva, Switzerland. 969080 author Gibertini Marco 0000-0003-3980-5319 Dipartimento di Scienze Fisiche, Informatiche e Matematiche, University of Modena and Reggio Emilia, Modena, Italy. marco.gibertini@unimore.it.,Centro S3, CNR-Istituto Nanoscienze, Modena, Italy. marco.gibertini@unimore.it. author Cheon Cheol Yeon 0009-0000-4169-2187 Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.,Group of Applied Physics, University of Geneva, Geneva, Switzerland. 405877 Département de physique de la matière quantique (FIMAC) author Lin Xiaohanwen 0000-0002-4144-5466 Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.,Group of Applied Physics, University of Geneva, Geneva, Switzerland. 974954 Département de physique de la matière quantique (FIMAC) author Wu Fan Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.,Group of Applied Physics, University of Geneva, Geneva, Switzerland. author Watanabe Kenji 0000-0003-3701-8119 Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan. author Taniguchi Takashi 0000-0002-1467-3105 Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan. author Gutierrez Lezama Ignacio 0000-0003-1280-915X Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.,Group of Applied Physics, University of Geneva, Geneva, Switzerland. 681297 Département de physique de la matière quantique (FIMAC) author Morpurgo Alberto 0000-0003-0974-3620 Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland. alberto.morpurgo@unige.ch.,Group of Applied Physics, University of Geneva, Geneva, Switzerland. alberto.morpurgo@unige.ch. 666794 Département de physique de la matière quantique (FIMAC) 609-616 10.1038/s41565-025-01872-w 40069431 1748-3387 https://www.nature.com/articles/s41565-025-01872-w Antiferromagnetic conductors with suitably broken spatial symmetries host spin-polarized bands, which lead to transport phenomena commonly observed in metallic ferromagnets. In bulk materials, it is the given crystalline structure that determines whether symmetries are broken and spin-polarized bands are present. Here we show that, in the two-dimensional limit, an electric field can control the relevant symmetries. To this end, we fabricate a double-gate transistor based on bilayers of van der Waals antiferromagnetic semiconductor CrPS<sub>4</sub> and show how a perpendicular electric displacement field can switch the spin polarization of the conduction band on and off. Because conduction band states with opposite spin polarizations are hosted in the different layers and are spatially separated, these devices also give control over the magnetization of the electrons that are accumulated electrostatically. Our experiments show that double-gated CrPS<sub>4</sub> transistors provide a viable platform to create gate-induced conductors with near unity spin polarization at the Fermi level, as well as devices with a full electrostatic control of the total magnetization of the system. Dewey 500.2 33 Département de physique de la matière quantique 131 35 Groupe de physique appliquée 135 false 678 Groupe Morpurgo Nature nanotechnology 20 ea5d764f-20bf-4296-a168-7471f1eeef43 Article (Published version) Public Article_scientifique_from_crossref.pdf 3806276 application/pdf CC BY-4.0 8e9799717b0f3b11bbcba2cc98a17c45eee589ef42d19a8b39bf81d04ad1d736 openAccess Faculté des sciences / Section de physique / Département de physique de la matière quantique Faculté des sciences / Section de physique / Groupe de physique appliquée

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Switching on and off the spin polarization of the conduction band in antiferromagnetic bilayer transistors	Nature nanotechnology			2025	43	220

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