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Low-temperature properties of ε-FeSi from ab initio band theory

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Published in Physical Review. B, Condensed Matter. 1995, vol. 51, no. 16, p. 11106-11109
Abstract Local-density calculations of the electronic structure as a function of temperature T and applied magnetic field H are presented for FeSi. The small band gap (6 mRy) makes FeSi change from being semiconducting at low T to being metallic at moderate T, and the exchange enhancement shows strong variations with T and H. An unusual situation, when a local field has closed the gap, is favorable for additional enhancement and spin fluctuations. Low-T properties are understood from mean-field calculations based on the band structure, but spin fluctuations have to be invoked to describe properties for T larger than about 200 K.
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Other version: https://link.aps.org/doi/10.1103/PhysRevB.51.11106
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JARLBORG, Thomas N. Low-temperature properties of ε-FeSi from ab initio band theory. In: Physical Review. B, Condensed Matter, 1995, vol. 51, n° 16, p. 11106-11109. https://archive-ouverte.unige.ch/unige:98929

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