Scientific article

Low-temperature properties of ε-FeSi from ab initio band theory

Published inPhysical Review. B, Condensed Matter, vol. 51, no. 16, p. 11106-11109
Publication date1995

Local-density calculations of the electronic structure as a function of temperature T and applied magnetic field H are presented for FeSi. The small band gap (6 mRy) makes FeSi change from being semiconducting at low T to being metallic at moderate T, and the exchange enhancement shows strong variations with T and H. An unusual situation, when a local field has closed the gap, is favorable for additional enhancement and spin fluctuations. Low-T properties are understood from mean-field calculations based on the band structure, but spin fluctuations have to be invoked to describe properties for T larger than about 200 K.

Citation (ISO format)
JARLBORG, Thomas N. Low-temperature properties of ε-FeSi from <i>ab initio</i> band theory. In: Physical Review. B, Condensed Matter, 1995, vol. 51, n° 16, p. 11106–11109. doi: 10.1103/PhysRevB.51.11106
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Article (Published version)
ISSN of the journal1098-0121

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