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Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS2

Published in Nano letters. 2015, vol. 15, no. 12, p. 8289-8294
Abstract We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of FETs based on exfoliated flakes. FETs on CVD-grown material, however, exhibit clear ambipolar transport, which for MoS2 monolayers had not been reported previously. We exploit this property to estimate the bandgap Δ of monolayer MoS2 directly from the device transfer curves and find Δ ≈ 2.4–2.7 eV. In the ambipolar injection regime, we observe electroluminescence due to exciton recombination in MoS2, originating from the region close to the hole-injecting contact. Both the observed transport properties and the behavior of the electroluminescence can be consistently understood as due to the presence of defect states at an energy of 250–300 meV above the top of the valence band, acting as deep traps for holes. Our results are of technological relevance, as they show that devices with useful optoelectronic functionality can be realized on large-area MoS2 monolayers produced by controllable and scalable techniques.
Keywords MoS2Light-emitting transistorIonic liquid gatingAmbipolar transportCVD
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Article (Accepted version) (839 Kb) - public document Free access
Research group Groupe Morpurgo
Swiss National Science Foundation: Synergia
Autre: EU Graphene Flagship
(ISO format)
PONOMAREV, Evgeniy et al. Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS2. In: Nano letters, 2015, vol. 15, n° 12, p. 8289-8294. doi: 10.1021/acs.nanolett.5b03885 https://archive-ouverte.unige.ch/unige:80547

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Deposited on : 2016-02-08

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