Scientific article
Open access

Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS2

Published inNano letters, vol. 15, no. 12, p. 8289-8294
Publication date2015

We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of FETs based on exfoliated flakes. FETs on CVD-grown material, however, exhibit clear ambipolar transport, which for MoS2 monolayers had not been reported previously. We exploit this property to estimate the bandgap Δ of monolayer MoS2 directly from the device transfer curves and find Δ ≈ 2.4–2.7 eV. In the ambipolar injection regime, we observe electroluminescence due to exciton recombination in MoS2, originating from the region close to the hole-injecting contact. Both the observed transport properties and the behavior of the electroluminescence can be consistently understood as due to the presence of defect states at an energy of 250–300 meV above the top of the valence band, acting as deep traps for holes. Our results are of technological relevance, as they show that devices with useful optoelectronic functionality can be realized on large-area MoS2 monolayers produced by controllable and scalable techniques.

  • MoS2
  • Light-emitting transistor
  • Ionic liquid gating
  • Ambipolar transport
  • CVD
Research group
  • Swiss National Science Foundation - Synergia
  • Autre - EU Graphene Flagship
Citation (ISO format)
PONOMAREV, Evgeniy et al. Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS<sub>2</sub>. In: Nano letters, 2015, vol. 15, n° 12, p. 8289–8294. doi: 10.1021/acs.nanolett.5b03885
Main files (1)
Article (Accepted version)
ISSN of the journal1530-6984

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