Weak localization and spin-orbit interaction in side-gate field effect devices at the LaAlO<sub>3</sub>/SrTiO<sub>3</sub> interface

Stornaiuolo, Daniela; Gariglio, Stefano; Fete, Alexandre; Gabay, M.; Li, Danfeng; Massarotti, D.; Triscone, Jean-Marc

doi:10.1103/PhysRevB.90.235426

Advanced search

Browse by...

Deposit

Highlights

More informations

Title		Weak localization and spin-orbit interaction in side-gate field effect devices at the LaAlO₃/SrTiO₃ interface
Authors		Stornaiuolo, Daniela Gariglio, Stefano Fete, Alexandre Gabay, M. Li, Danfeng Massarotti, D. Triscone, Jean-Marc
Published in		Physical Review. B, Condensed Matter. 2014, vol. 90, no. 23, p. 235426
Abstract		Using field effect devices with side gates, we modulate the 2-dimensional electron gas hosted at the LaAlO3/SrTiO3 interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals different transport regimes depending on the interplay between the different (elastic, inelastic, and spin-orbit) scattering times and their temperature dependencies. We find that the spin-orbit interaction strongly affects the low-temperature transport in the normal state in a very large region of the phase diagram, extending beyond the superconducting dome.
Identifiers		DOI: 10.1103/PhysRevB.90.235426
Full text		Article (Published version) (923 Kb) - Free access
Structures		Faculté des sciences / Section de physique / Département de physique de la matière quantique
Research group		Groupe Triscone
Projects		FNS: No. 200020-152800 FNS: No. 319286 (Q-MAC)
Citation (ISO format)		STORNAIUOLO, Daniela et al. Weak localization and spin-orbit interaction in side-gate field effect devices at the LaAlO₃/SrTiO₃ interface. In: Physical Review. B, Condensed Matter, 2014, vol. 90, n° 23, p. 235426. doi: 10.1103/PhysRevB.90.235426 https://archive-ouverte.unige.ch/unige:47229