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Admittance and Nonlinear Transport in Quantum Wires, Point Contacts, and Resonant Tunneling Barriers

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Published in L. Kowenhoven, G. Schoen and L. Sohn. NATO Advanced Study Institute : Mesoscopic Electron Transport. Curaçao (Netherlands Antilles) - 25 June-5 July 1996 - Kluwer Academic Publ. 1997, p. 259-289
Collection NATO Science Series E; 345
Abstract We present a discussion of the admittance (ac-conductance) and nonlinear I-V-characteristic for a number of mesoscopic conductors. Our approach is based on a generalization of the scattering approach which now includes the effects of the (long-range) Coulomb interaction. We discuss the admittance of a wire with an impurity and with a nearby gate. We extend a discussion of the low-frequency admittance of a quantum point contact to investigate the effects of the gates used to form the contact. We discuss the nonlinear I-V characteristic of a resonant double barrier structure and discuss the admittance for the double barrier for a large range of frequencies. Our approach emphasizes the overall conservation of charge (gauge invariance) and current conservation and the resulting sum rules for the admittance matrix and nonlinear transport coefficients.
Keywords Mesoscopic systems and quantum hall effect
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ISBN: 978-0-7923-4737-8
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BUTTIKER, Markus, CHRISTEN, Thomas. Admittance and Nonlinear Transport in Quantum Wires, Point Contacts, and Resonant Tunneling Barriers. In: L. Kowenhoven, G. Schoen and L. Sohn (Ed.). NATO Advanced Study Institute : Mesoscopic Electron Transport. Curaçao (Netherlands Antilles). Kluwer Academic Publ : [s.n.], 1997. p. 259-289. (NATO Science Series E; 345) https://archive-ouverte.unige.ch/unige:4487

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Deposited on : 2009-12-01

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