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Admittance and Nonlinear Transport in Quantum Wires, Point Contacts, and Resonant Tunneling Barriers

Published inNATO Advanced Study Institute : Mesoscopic Electron Transport, Editors L. Kowenhoven, G. Schoen and L. Sohn, p. 259-289
Presented at Curaçao (Netherlands Antilles), 25 June-5 July 1996
PublisherKluwer Academic Publ
  • NATO Science Series E; 345
Publication date1997

We present a discussion of the admittance (ac-conductance) and nonlinear I-V-characteristic for a number of mesoscopic conductors. Our approach is based on a generalization of the scattering approach which now includes the effects of the (long-range) Coulomb interaction. We discuss the admittance of a wire with an impurity and with a nearby gate. We extend a discussion of the low-frequency admittance of a quantum point contact to investigate the effects of the gates used to form the contact. We discuss the nonlinear I-V characteristic of a resonant double barrier structure and discuss the admittance for the double barrier for a large range of frequencies. Our approach emphasizes the overall conservation of charge (gauge invariance) and current conservation and the resulting sum rules for the admittance matrix and nonlinear transport coefficients.

  • Mesoscopic systems and quantum hall effect
Citation (ISO format)
BUTTIKER, Markus, CHRISTEN, Thomas. Admittance and Nonlinear Transport in Quantum Wires, Point Contacts, and Resonant Tunneling Barriers. In: NATO Advanced Study Institute : Mesoscopic Electron Transport. Curaçao (Netherlands Antilles). Kluwer Academic Publ : [s.n.], 1997. p. 259–289. (NATO Science Series E)
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