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Admittance and Nonlinear Transport in Quantum Wires, Point Contacts, and Resonant Tunneling Barriers

Published inNATO Advanced Study Institute : Mesoscopic Electron Transport, Editors L. Kowenhoven, G. Schoen and L. Sohn, p. 259-289
Presented at Curaçao (Netherlands Antilles), 25 June-5 July 1996
PublisherKluwer Academic Publ
Collection
  • NATO Science Series E; 345
Publication date1997
Abstract

We present a discussion of the admittance (ac-conductance) and nonlinear I-V-characteristic for a number of mesoscopic conductors. Our approach is based on a generalization of the scattering approach which now includes the effects of the (long-range) Coulomb interaction. We discuss the admittance of a wire with an impurity and with a nearby gate. We extend a discussion of the low-frequency admittance of a quantum point contact to investigate the effects of the gates used to form the contact. We discuss the nonlinear I-V characteristic of a resonant double barrier structure and discuss the admittance for the double barrier for a large range of frequencies. Our approach emphasizes the overall conservation of charge (gauge invariance) and current conservation and the resulting sum rules for the admittance matrix and nonlinear transport coefficients.

Keywords
  • Mesoscopic systems and quantum hall effect
Citation (ISO format)
BUTTIKER, Markus, CHRISTEN, Thomas. Admittance and Nonlinear Transport in Quantum Wires, Point Contacts, and Resonant Tunneling Barriers. In: NATO Advanced Study Institute : Mesoscopic Electron Transport. Curaçao (Netherlands Antilles). Kluwer Academic Publ : [s.n.], 1997. p. 259–289. (NATO Science Series E)
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ISBN978-0-7923-4737-8
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