Scientific article
OA Policy
English

Emergent quantum confinement at topological insulator surfaces

Published inNature communications, vol. 3, no. 1159
Publication date2012
Abstract

Bismuth-chalchogenides are model examples of three-dimensional topological insulators. Their ideal bulk-truncated surface hosts a single spin-helical surface state, which is the simplest possible surface electronic structure allowed by their non-trivial Z2 topology. However, real surfaces of such compounds, even if kept in ultra-high vacuum, rapidly develop a much more complex electronic structure whose origin and properties have proved controversial. Here we demonstrate that a conceptually simple model, implementing a semiconductor-like band bending in a parameter-free tight-binding supercell calculation, can quantitatively explain the entire measured hierarchy of electronic states. In combination with circular dichroism in angle-resolved photoemission experiments, we further uncover a rich three-dimensional spin texture of this surface electronic system, resulting from the non-trivial topology of the bulk band structure. Moreover, our study sheds new light on the surface-bulk connectivity in topological insulators, and reveals how this is modified by quantum confinement.

Keywords
  • Physical sciences
  • Condensed matter
  • Materials science
Research groups
Citation (ISO format)
BAHRAMY, M.S. et al. Emergent quantum confinement at topological insulator surfaces. In: Nature communications, 2012, vol. 3, n° 1159. doi: 10.1038/ncomms2162
Main files (1)
Article (Published version)
accessLevelPublic
Identifiers
Journal ISSN2041-1723
575views
178downloads

Technical informations

Creation11/21/2014 9:53:00 AM
First validation11/21/2014 9:53:00 AM
Update time03/14/2023 10:17:09 PM
Status update03/14/2023 10:17:08 PM
Last indexation10/30/2024 8:51:41 PM
All rights reserved by Archive ouverte UNIGE and the University of GenevaunigeBlack