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Title

Relaxation time of a chiral quantum R-L circuit

Authors
Gabelli, Julien
Fève, Gwendal
Kontos, Takis
Berroir, Jean-Marc
Placais, B.
Glattli, D. Christian
Etienne, Bernard
Jin, Yong
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Published in Physical Review Letters. 2007, vol. 98, p. 166806
Abstract We report on the GHz complex admittance of a chiral one dimensional ballistic conductor formed by edge states in the quantum Hall regime. The circuit consists of a wide Hall bar (the inductor L) in series with a tunable resistor (R) formed by a quantum point contact. Electron interactions between edges are screened by a pair of side gates. Conductance steps are observed on both real and imaginary parts of the admittance. Remarkably, the phase of the admittance is transmission-independent. This shows that the relaxation time of a chiral R-L circuit is resistance independent. A current and charge conserving scattering theory is presented that accounts for this observation with a relaxation time given by the electronic transit time in the circuit.
Keywords Carrier relaxation timeConductors (electric)InductorsQuantum Hall effectQuantum point contactsResistorsRLC circuits
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GABELLI, Julien et al. Relaxation time of a chiral quantum R-L circuit. In: Physical Review Letters, 2007, vol. 98, p. 166806. https://archive-ouverte.unige.ch/unige:4205

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Deposited on : 2009-11-30

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