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Relaxation time of a chiral quantum R-L circuit

Published inPhysical review letters, vol. 98, 166806
Publication date2007
Abstract

We report on the GHz complex admittance of a chiral one dimensional ballistic conductor formed by edge states in the quantum Hall regime. The circuit consists of a wide Hall bar (the inductor L) in series with a tunable resistor (R) formed by a quantum point contact. Electron interactions between edges are screened by a pair of side gates. Conductance steps are observed on both real and imaginary parts of the admittance. Remarkably, the phase of the admittance is transmission-independent. This shows that the relaxation time of a chiral R-L circuit is resistance independent. A current and charge conserving scattering theory is presented that accounts for this observation with a relaxation time given by the electronic transit time in the circuit.

Keywords
  • Carrier relaxation time
  • Conductors (electric)
  • Inductors
  • Quantum Hall effect
  • Quantum point contacts
  • Resistors
  • RLC circuits
Citation (ISO format)
GABELLI, Julien et al. Relaxation time of a chiral quantum R-L circuit. In: Physical review letters, 2007, vol. 98, p. 166806. doi: 10.1103/PhysRevLett.98.166806
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ISSN of the journal0031-9007
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