fr
Article scientifique
Accès libre
Anglais

Relaxation time of a chiral quantum R-L circuit

Publié dansPhysical review letters, vol. 98, 166806
Date de publication2007
Résumé

We report on the GHz complex admittance of a chiral one dimensional ballistic conductor formed by edge states in the quantum Hall regime. The circuit consists of a wide Hall bar (the inductor L) in series with a tunable resistor (R) formed by a quantum point contact. Electron interactions between edges are screened by a pair of side gates. Conductance steps are observed on both real and imaginary parts of the admittance. Remarkably, the phase of the admittance is transmission-independent. This shows that the relaxation time of a chiral R-L circuit is resistance independent. A current and charge conserving scattering theory is presented that accounts for this observation with a relaxation time given by the electronic transit time in the circuit.

Mots-clés
  • Carrier relaxation time
  • Conductors (electric)
  • Inductors
  • Quantum Hall effect
  • Quantum point contacts
  • Resistors
  • RLC circuits
Citation (format ISO)
GABELLI, Julien et al. Relaxation time of a chiral quantum R-L circuit. In: Physical review letters, 2007, vol. 98, p. 166806. doi: 10.1103/PhysRevLett.98.166806
Fichiers principaux (1)
Article
accessLevelPublic
Identifiants
ISSN du journal0031-9007
534vues
192téléchargements

Informations techniques

Création30.11.2009 15:07:10
Première validation30.11.2009 15:07:10
Heure de mise à jour14.03.2023 15:18:02
Changement de statut14.03.2023 15:18:02
Dernière indexation12.02.2024 18:15:22
All rights reserved by Archive ouverte UNIGE and the University of GenevaunigeBlack