Scientific article

Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment

Publication date2011

The ATLAS collaboration R&D group “Development of n-in-p Silicon Sensors for very high radiation environment” has developed single-sided p-type 9.75 cm×9.75 cm sensors with an n-type readout strips having radiation tolerance against the 1015 1-MeV neutron equivalent (neq)/cm2 fluence expected in the Super Large Hadron Collider. The compiled results of an evaluation of the bulk and strip parameter characteristics of 19 new non-irradiated sensors manufactured by Hamamatsu Photonics are presented in this paper. It was verified in detail that the sensors comply with the technical specifications required before irradiation. The reverse bias voltage dependence of various parameters, frequency dependence of tested capacitances, and strip scans of more than 23,000 strips as a test of parameter uniformity and strip quality over the whole sensor area have been carried out at Stony Brook University, Cambridge University, University of Geneva, and Academy of Sciences of CR and Charles University in Prague. No openings, shorts, or pinholes were observed on all tested strips, confirming the high quality of sensors made by Hamamatsu Photonics.

  • Silicon
  • Micro-strip
  • ATLAS ID upgrade
  • SLHC
  • Leakage current
  • Depletion voltage
  • Electrical characteristics
  • Coupling capacitance
  • Inter-strip capacitance
  • Inter-strip resistance
Citation (ISO format)
BOHM, J. et al. Evaluation of the bulk and strip characteristics of large area <em>n</em>-in-<em>p</em> silicon sensors intended for a very high radiation environment. In: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2011, vol. 636, n° 1, p. S104–S110. doi: 10.1016/j.nima.2010.04.093
Main files (1)
Article (Published version)
ISSN of the journal0168-9002

Technical informations

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