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Scientific article
English

Scalable Patterning of One-Dimensional Dangling Bond Rows on Hydrogenated Si(001)

Published inACS nano, vol. 7, no. 5, p. 4422-4428
Publication date2013
Abstract

Silicon dangling bonds exposed on the monohydride silicon (001) (Si(001):H) surface are highly reactive, thus enabling site-selective absorption of atoms, and single molecules into custom patterns designed through the controlled removal of hydrogen atoms. Current implementations of high-resolution hydrogen lithography on the Si(001):H surface rely on sequential removal of hydrogen atoms using the tip of a scanning probe microscope. Here, we present a scalable thermal process that yields very long rows of single dimer wide silicon dangling bonds suitable for self-assembly of atoms and molecules into one-dimensional structures of unprecedented length on Si(001):H. The row consists of the standard buckled Si dimer and an unexpected flat dimer configuration.

Keywords
  • Scanning tunneling microscopy
  • Scanning probe lithography
  • Self-assembly
  • One-dimensional
  • Dangling bond
  • Silicon
  • Dimer
Research group
Citation (ISO format)
BIANCO, François et al. Scalable Patterning of One-Dimensional Dangling Bond Rows on Hydrogenated Si(001). In: ACS nano, 2013, vol. 7, n° 5, p. 4422–4428. doi: 10.1021/nn4010236
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Article (Published version)
accessLevelRestricted
Identifiers
ISSN of the journal1936-0851
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