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Scalable Patterning of One-Dimensional Dangling Bond Rows on Hydrogenated Si(001)

Bowler, David R.
Published in ACS nano. 2013, vol. 7, no. 5, p. 4422-4428
Abstract Silicon dangling bonds exposed on the monohydride silicon (001) (Si(001):H) surface are highly reactive, thus enabling site-selective absorption of atoms, and single molecules into custom patterns designed through the controlled removal of hydrogen atoms. Current implementations of high-resolution hydrogen lithography on the Si(001):H surface rely on sequential removal of hydrogen atoms using the tip of a scanning probe microscope. Here, we present a scalable thermal process that yields very long rows of single dimer wide silicon dangling bonds suitable for self-assembly of atoms and molecules into one-dimensional structures of unprecedented length on Si(001):H. The row consists of the standard buckled Si dimer and an unexpected flat dimer configuration.
Keywords Scanning tunneling microscopyScanning probe lithographySelf-assemblyOne-dimensionalDangling bondSiliconDimer
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Research group Groupe Renner
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BIANCO, François et al. Scalable Patterning of One-Dimensional Dangling Bond Rows on Hydrogenated Si(001). In: ACS nano, 2013, vol. 7, n° 5, p. 4422-4428. doi: 10.1021/nn4010236 https://archive-ouverte.unige.ch/unige:35924

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Deposited on : 2014-04-22

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