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Limited access to UNIGEOther version: http://pubs.acs.org/doi/abs/10.1021/nn4010236
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Scientific Article
unige:35924 
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Scalable Patterning of One-Dimensional Dangling Bond Rows on Hydrogenated Si(001) |
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| Authors | ||
| Published in | ACS Nano. 2013, vol. 7, no. 5, p. 4422-4428 | |
| Abstract | Silicon dangling bonds exposed on the monohydride silicon (001) (Si(001):H) surface are highly reactive, thus enabling site-selective absorption of atoms, and single molecules into custom patterns designed through the controlled removal of hydrogen atoms. Current implementations of high-resolution hydrogen lithography on the Si(001):H surface rely on sequential removal of hydrogen atoms using the tip of a scanning probe microscope. Here, we present a scalable thermal process that yields very long rows of single dimer wide silicon dangling bonds suitable for self-assembly of atoms and molecules into one-dimensional structures of unprecedented length on Si(001):H. The row consists of the standard buckled Si dimer and an unexpected flat dimer configuration. | |
| Keywords | Scanning tunneling microscopy — Scanning probe lithography — Self-assembly — One-dimensional — Dangling bond — Silicon — Dimer | |
| Identifiers | DOI: 10.1021/nn4010236 | |
| Full text |
Article (Published version) (1.1 MB) - Limited access to UNIGE Other version: http://pubs.acs.org/doi/abs/10.1021/nn4010236 |
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| Structures | ||
| Citation (ISO format) | BIANCO, François et al. Scalable Patterning of One-Dimensional Dangling Bond Rows on Hydrogenated Si(001). In: ACS Nano, 2013, vol. 7, n° 5, p. 4422-4428. https://archive-ouverte.unige.ch/unige:35924 |
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