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The origin of inter-dimer-row correlated adsorption for NH3 on Si(001)

Bowler, D. R.
Published in Surface science. 2009, vol. 603, no. 18, p. 2902-2906
Abstract We discuss the interaction between adsorbing ammonia molecules and pre-adsorbed ammonia fragments on the Si(001) surface, searching for experimental evidence of a H-bonded precursor state predicted by modelling. While correlations along dimer rows have already been identified, these mix substrate-mediated effects due to dimer buckling with ammonia–adsorbate effects. Correlations between fragments on neighbouring dimer rows are not affected by substrate effects (in this system), allowing an analysis of direct ammonia–adsorbate effects. We present an analysis of cross-row correlations in existing high-coverage STM data which shows significant correlations between NH2 groups on neighbouring dimer rows over a significant range, providing evidence for the H-bonded precursor state with a range of around 10 Å. We discuss implications for the interpretation of STM images of ammonia on Si(001).
Keywords Scanning tunneling microscopySurface chemical reactionAmmonia
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Research group Groupe Renner
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OWEN, James, BOWLER, D. R. The origin of inter-dimer-row correlated adsorption for NH3 on Si(001). In: Surface science, 2009, vol. 603, n° 18, p. 2902-2906. doi: 10.1016/j.susc.2009.07.042 https://archive-ouverte.unige.ch/unige:35921

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Deposited on : 2014-04-22

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