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Scientific article
English

The origin of inter-dimer-row correlated adsorption for NH3 on Si(001)

Published inSurface science, vol. 603, no. 18, p. 2902-2906
Publication date2009
Abstract

We discuss the interaction between adsorbing ammonia molecules and pre-adsorbed ammonia fragments on the Si(001) surface, searching for experimental evidence of a H-bonded precursor state predicted by modelling. While correlations along dimer rows have already been identified, these mix substrate-mediated effects due to dimer buckling with ammonia–adsorbate effects. Correlations between fragments on neighbouring dimer rows are not affected by substrate effects (in this system), allowing an analysis of direct ammonia–adsorbate effects. We present an analysis of cross-row correlations in existing high-coverage STM data which shows significant correlations between NH2 groups on neighbouring dimer rows over a significant range, providing evidence for the H-bonded precursor state with a range of around 10 Å. We discuss implications for the interpretation of STM images of ammonia on Si(001).

Keywords
  • Scanning tunneling microscopy
  • Surface chemical reaction
  • Ammonia
Research group
Citation (ISO format)
OWEN, James, BOWLER, D. R. The origin of inter-dimer-row correlated adsorption for NH<sub>3</sub> on Si(001). In: Surface science, 2009, vol. 603, n° 18, p. 2902–2906. doi: 10.1016/j.susc.2009.07.042
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Article (Published version)
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Identifiers
ISSN of the journal0039-6028
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