Scientific article
English

Effect of Anisotropic Strain on the Electronic Properties of the Pressure Induced Superconductor CePd2Si2

Published inActa Physica Polonica. B, vol. 34, no. 2, p. 459-462
Publication date2003
Abstract

Taking advantage of the additional uniaxial stress present in the non-ideal pressure conditions of a Bridgman anvil cell, we demonstrate the high sensitivity of the physical properties in CePd2Si2 to anisotropic strain. Stress applied along the c-axis extends the phase diagram to higher pressures and enhances the superconducting phase emerging around the magnetic instability, with a 40% increase in the maximum superconducting temperature and a doubled pressure range. We discuss first the possible effect of anisotropic strain on the physics described only by spin fluctuations. However, the pressure dependence of the resistivity suggests a more complex ground state around the quantum critical point, where the Kondo and excited crystal field energies interact.

NotePresented ar the International Conference on Strongly Correlated Electron System, Cracow, Poland, July 10-13 2002
Citation (ISO format)
DEMUER, A., HOLMES, Alexander, JACCARD, Didier. Effect of Anisotropic Strain on the Electronic Properties of the Pressure Induced Superconductor CePd2Si2. In: Acta Physica Polonica. B, 2003, vol. 34, n° 2, p. 459–462.
Main files (1)
Article (Published version)
accessLevelRestricted
Identifiers
  • PID : unige:35743
Journal ISSN0587-4254
482views
0downloads

Technical informations

Creation04/15/2014 3:51:00 PM
First validation04/15/2014 3:51:00 PM
Update time03/14/2023 9:08:04 PM
Status update03/14/2023 9:08:04 PM
Last indexation10/30/2024 4:53:27 PM
All rights reserved by Archive ouverte UNIGE and the University of GenevaunigeBlack