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Title

Theoretical study of SiH3-defect stability and formation on the H-saturated Si(100)1x1 surface

Authors
Vittadini, Andrea
Casarin, Mauro
Published in Physical Review. B, Condensed Matter. 1992, vol. 46, no. 7, p. 4348-4351
Abstract We present first-principles calculations for the initial stages of etching of Si(100) by H atoms. We find that adsorbed SiH3 species [(SiH3(a)] on the H-saturated Si(100)1×1 surface have a negative formation energy. Our results also indicate that the Si-Si backbond breaking which gives rise to the formation of these SiH3(a) defects is possibly promoted by a bonding state between hydrogen and silicon atoms in the second layer.
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Other version: http://prola.aps.org/pdf/PRB/v46/i7/p4348_1
Structures
Research group Groupe Weber
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VITTADINI, Andrea et al. Theoretical study of SiH3-defect stability and formation on the H-saturated Si(100)1x1 surface. In: Physical Review. B, Condensed Matter, 1992, vol. 46, n° 7, p. 4348-4351. https://archive-ouverte.unige.ch/unige:2916

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Deposited on : 2009-09-21

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