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Piezoresistance in Silicon at Uniaxial Compressive Stresses up to 3 GPa

Milne, J.S.
Favorskiy, I.
Rowe, A.C.H.
Arscott, S.
Published in Physical Review Letters. 2012, vol. 108, no. 25, p. 5p.
Abstract The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance (G) of n-type silicon eventually saturates at about 45% of its zero-stress value (G0) in accordance with the charge transfer model, in p-type material G=G0 increases above a predicted limit of about 4.5 without any significant saturation, even at 3 GPa. Calculation of G=G0 using ab initio density functional theory reveals that neither G nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained-silicon technologies.
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MILNE, J.S. et al. Piezoresistance in Silicon at Uniaxial Compressive Stresses up to 3 GPa. In: Physical Review Letters, 2012, vol. 108, n° 25, p. 5p. https://archive-ouverte.unige.ch/unige:21682

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Deposited on : 2012-06-27

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