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Piezoresistance in Silicon at Uniaxial Compressive Stresses up to 3 GPa

Contributors

Milne, J.S.; Favorskiy, I.; Rowe, A.C.H.; Arscott, S.; Renner, Christoph

Published in

Physical review letters, vol. 108, no. 25, 5 p.

Publication date

2012

Abstract

The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance (G) of n-type silicon eventually saturates at about 45% of its zero-stress value (G0) in accordance with the charge transfer model, in p-type material G=G0 increases above a predicted limit of about 4.5 without any significant saturation, even at 3 GPa. Calculation of G=G0 using ab initio density functional theory reveals that neither G nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained-silicon technologies.

UNIGE affiliation entities

UNIGE research groups

Citation (ISO format)

MILNE, J.S. et al. Piezoresistance in Silicon at Uniaxial Compressive Stresses up to 3 GPa. In: Physical review letters, 2012, vol. 108, n° 25, p. 5 p. doi: 10.1103/PhysRevLett.108.256801

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Article (Published version)

Identifiers

Journal ISSN

0031-9007
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Technical informations

Creation

27/06/2012 09:38:00

First validation

27/06/2012 09:38:00

Update

14/03/2023 17:37:54

Status update

14/03/2023 17:37:53

Last indexation

29/10/2024 20:19:37
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