Strain, which results from the deformation of a material, is used as a tuning parameter to study the charge density wave (CDW) phase in transition metal dichalcogenides (TMDs). We have developed two bending devices to apply uniaxial or biaxial strain to low-dimensional materials. Characterization of the generated strain was performed by Raman spectroscopy on exfoliated MoS₂. For each device, we observed the characteristic behavior of MoS₂ Raman modes under both types of strain. The CDW in uniaxially deformed TiSe₂ was studied by scanning tunneling microscopy (STM). Topographic measurements with bias dependence as a function of strain revealed a shift of the CDW contrast inversion. Since contrast inversion is determined by the position of the CDW gap, we concluded that uniaxial tensile strain pushes the CDW gap in TiSe₂ towards higher negative bias.