Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates
ContributorsWang, Yan; Rademaker, Louk
; Dagotto, Elbio; Johnston, Steven
Published inPhysical review. B, vol. 96, no. 5, 054515
Publication date2017-08-18
First online date2017-08-18
Abstract
Affiliation entities Not a UNIGE publication
Research groups
Citation (ISO format)
WANG, Yan et al. Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates. In: Physical review. B, 2017, vol. 96, n° 5, p. 054515. doi: 10.1103/PhysRevB.96.054515
Main files (1)
Article (Published version)
Identifiers
- PID : unige:165808
- DOI : 10.1103/PhysRevB.96.054515
Additional URL for this publicationhttps://link.aps.org/doi/10.1103/PhysRevB.96.054515
Journal ISSN2469-9950