en
Scientific article
Open access
English

How to Recognize the Universal Aspects of Mott Criticality?

Published inCrystals, vol. 12, no. 7, 932
Publication date2022-06-30
First online date2022-06-30
Abstract

In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner–Mott) type, including dilute two-dimension electron gases (2DEG) in semiconductors, Mott organic materials, as well as the recently discovered transition-metal dichalcogenide (TMD) moiré bilayers. Remarkably similar behavior is found in all these systems, which is starting to paint a robust picture of Mott criticality. Most notable, on the metallic side a resistivity maximum is observed whose temperature scale vanishes at the transition. We compare the available experimental data on these systems to three existing theoretical scenarios: spinon theory, Dynamical Mean Field Theory (DMFT) and percolation theory. We show that the DMFT and percolation pictures for Mott criticality can be distinguished by studying the origins of the resistivity maxima using an analysis of the dielectric response.

eng
Research group
Citation (ISO format)
TAN, Yuting, DOBROSAVLJEVIĆ, Vladimir, RADEMAKER, Louk. How to Recognize the Universal Aspects of Mott Criticality? In: Crystals, 2022, vol. 12, n° 7, p. 932. doi: 10.3390/cryst12070932
Main files (1)
Article (Published version)
accessLevelPublic
Identifiers
ISSN of the journal2073-4352
180views
38downloads

Technical informations

Creation12/12/2022 10:54:00 AM
First validation12/12/2022 10:54:00 AM
Update time03/16/2023 10:14:31 AM
Status update03/16/2023 10:14:30 AM
Last indexation05/06/2024 3:03:49 PM
All rights reserved by Archive ouverte UNIGE and the University of GenevaunigeBlack