Scientific article
Open access

How to Recognize the Universal Aspects of Mott Criticality?

Published inCrystals, vol. 12, no. 7, 932
Publication date2022-06-30
First online date2022-06-30

In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner–Mott) type, including dilute two-dimension electron gases (2DEG) in semiconductors, Mott organic materials, as well as the recently discovered transition-metal dichalcogenide (TMD) moiré bilayers. Remarkably similar behavior is found in all these systems, which is starting to paint a robust picture of Mott criticality. Most notable, on the metallic side a resistivity maximum is observed whose temperature scale vanishes at the transition. We compare the available experimental data on these systems to three existing theoretical scenarios: spinon theory, Dynamical Mean Field Theory (DMFT) and percolation theory. We show that the DMFT and percolation pictures for Mott criticality can be distinguished by studying the origins of the resistivity maxima using an analysis of the dielectric response.

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Citation (ISO format)
TAN, Yuting, DOBROSAVLJEVIĆ, Vladimir, RADEMAKER, Louk. How to Recognize the Universal Aspects of Mott Criticality? In: Crystals, 2022, vol. 12, n° 7, p. 932. doi: 10.3390/cryst12070932
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ISSN of the journal2073-4352

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