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Scientific article
Open access
English

Side Gate Tunable Josephson Junctions at the LaAlO3/SrTiO3 Interface

Published inNano letters, vol. 17, no. 2, p. 715-720
Publication date2017-01-19
First online date2017-01-19
Abstract

Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO3/SrTiO3 interface as a model system, we employ a single-step lithographic process to realize gate-tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates.

eng
Keywords
  • Josephson junction
  • Oxide heterostructures
  • SQUID
  • Field-effect
  • Side gates
Affiliation Not a UNIGE publication
Research group
Funding
  • Dutch Research Council (NWO) -
  • Stichting voor Fundamenteel Onderzoek der Materie -
Citation (ISO format)
MONTEIRO, A. M. R. V. L. et al. Side Gate Tunable Josephson Junctions at the LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface. In: Nano letters, 2017, vol. 17, n° 2, p. 715–720. doi: 10.1021/acs.nanolett.6b03820
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Article (Published version)
accessLevelPublic
Identifiers
ISSN of the journal1530-6984
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