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Scientific article
English

Quasi 1D Electronic Transport in a 2D Magnetic Semiconductor

Contributors

Wu, Fan; Gutierrez Lezama, Ignacio; Lopéz‐Paz, Sara A.; Gibertini, Marco; Watanabe, Kenji; Taniguchi, Takashi; Von Rohr, Fabian Oliver; Ubrig, Nicolas; Morpurgo, Alberto

Published in

Advanced materials, 2109759

Publication date

2022-02-22

First online date

2022-02-22

Abstract

We investigate electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor that is attracting attention because of its magnetic properties. We find an extremely pronounced anisotropy that manifests itself in qualitative and quantitative differences of all quantities measured along the in-plane \textit{a} and \textit{b} crystallographic directions. In particular, we observe a qualitatively different dependence of the conductivities $\sigma_a$ and $\sigma_b$ on temperature and gate voltage, accompanied by orders of magnitude differences in their values ($\sigma_b$/$\sigma_a \approx 3\cdot10^2-10^5$ at low temperature and large negative gate voltage). We also find a different behavior of the longitudinal magnetoresistance in the two directions, and the complete absence of the Hall effect in transverse resistance measurements. These observations appear not to be compatible with a description in terms of conventional band transport of a 2D doped semiconductor. The observed phenomenology --together with unambiguous signatures of a 1D van Hove singularity that we detect in energy resolved photocurrent measurements-- indicate that electronic transport through CrSBr multilayers is better interpreted by considering the system as formed by weakly and incoherently coupled 1D wires, than by conventional 2D band transport. We conclude that CrSBr is the first 2D semiconductor to show distinctly quasi 1D electronic transport properties.

Keywords

  • 1D transport
  • 2D magnets
  • 2D semiconductors
  • CrSBr
  • anisotropy

UNIGE affiliation entities

UNIGE research groups

Citation (ISO format)

WU, Fan et al. Quasi 1D Electronic Transport in a 2D Magnetic Semiconductor. In: Advanced materials, 2022, p. 2109759. doi: 10.1002/adma.202109759

Main files (1)

Article (Submitted version)

Identifiers

Additional URL for this publication

https://onlinelibrary.wiley.com/doi/10.1002/adma.202109759

Journal ISSN

0935-9648
644views
174downloads

Technical informations

Creation

23/02/2022 11:18:00

First validation

23/02/2022 11:18:00

Update

16/03/2023 02:43:59

Status update

16/03/2023 02:43:59

Last indexation

10/06/2025 21:45:22
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