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Coupling Lattice Instabilities Across the Interface in Ultrathin Oxide Heterostructures

Published inACS Materials Letters, vol. 2, no. 4, p. 389-394
Publication date2020
Abstract

Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here, we determine the effect of the cubic-tetragonal distortion of SrTiO3 on the electronic properties of thin films of SrIrO3, a topological crystalline metal hosting a delicate interplay between spin-orbit coupling and electronic correlations. We demonstrate that below the transition temperature at 105 K, SrIrO3 orthorhombic domains couple directly to tetragonal domains in SrTiO3. This forces the in-phase rotational axis to lie in-plane and creates a binary domain structure in the SrIrO3 film. The close proximity to the metal–insulator transition in ultrathin SrIrO3 causes the individual domains to have strongly anisotropic transport properties, driven by a reduction of bandwidth along the in-phase axis. The strong structure–property relationships in perovskites make these compounds particularly suitable for static and dynamic coupling at interfaces, providing a promising route towards realizing novel functionalities in oxide heterostructures.

Funding
  • European Commission - Frontiers in Quantum Materials Control [319286]
Citation (ISO format)
VAN THIEL, Thierry C. et al. Coupling Lattice Instabilities Across the Interface in Ultrathin Oxide Heterostructures. In: ACS Materials Letters, 2020, vol. 2, n° 4, p. 389–394. doi: 10.1021/acsmaterialslett.9b00540
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ISSN of the journal2639-4979
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