Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3–SrTiO3 interfaces

Jany, R.; Breitschaft, M.; Hammerl, G.; Horsche, A.; Richter, C.; Paetel, S.; Mannhart, J.; Stucki, Nicolas; Reyren, Nicolas; Gariglio, Stefano; Zubko, Pavlo; Caviglia, Andrea; Triscone, Jean-Marc

doi:10.1063/1.3428433

Scientific article

Open access

English

Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO₃–SrTiO₃ interfaces

ContributorsJany, R.; Breitschaft, M.; Hammerl, G.; Horsche, A.; Richter, C.; Paetel, S.; Mannhart, J.; Stucki, Nicolas; Reyren, Nicolas; Gariglio, Stefano

; Zubko, Pavlo; Caviglia, Andrea

; Triscone, Jean-Marc

Published inApplied Physics Letters, vol. 96, no. 18, 183504

Publication date2010

Abstract

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO3-SrTiO3 interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.

Affiliation

Faculté des sciences / Section de physique / Département de physique de la matière quantique

Research group

Citation (ISO format)

JANY, R. et al. Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3–SrTiO3 interfaces. In: Applied Physics Letters, 2010, vol. 96, n° 18, p. 183504. doi: 10.1063/1.3428433

Article (Published version)

Identifiers

PID : unige:114277
DOI : 10.1063/1.3428433

Commercial URLhttp://aip.scitation.org/doi/10.1063/1.3428433

ISSN of the journal0003-6951

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Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3–SrTiO3 interfaces

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Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO₃–SrTiO₃ interfaces