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Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3–SrTiO3 interfaces

Published inApplied Physics Letters, vol. 96, no. 18, 183504
Publication date2010
Abstract

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO3-SrTiO3 interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.

Citation (ISO format)
JANY, R. et al. Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO<sub>3</sub>–SrTiO<sub>3</sub> interfaces. In: Applied Physics Letters, 2010, vol. 96, n° 18, p. 183504. doi: 10.1063/1.3428433
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ISSN of the journal0003-6951
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