Scientific article

Thermal stability of SrRuO3 epitaxial layers under forming-gas anneal

Published inMaterials Science and Engineering. B, vol. 109, no. 1-3, p. 113-116
Publication date2004

Perovskite SrRuO3 films are promising candidates as metallic electrodes in high-permittivity (high k) capacitors and possibly in fully epitaxial CMOS stacks. The thermal stability of SrRuO3 during forming-gas (FG) anneal is an important requirement and is investigated here by in situ X-ray diffraction (XRD) and electrical resistivity measurements. A weak and smooth increase of the resistivity is observed above 300 degreesC and is attributed to the effect of hydrogen diffusion. It is followed by a sharp transition at 500 degreesC into a highly resistive state due to the decomposition of the SrRuO3. We found that the addition of about 1% O-2 in the FG prevents both the onset of resistivity at 300degreesC and the decomposition of the oxide.

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Citation (ISO format)
HALLEY, D et al. Thermal stability of SrRuO<sub>3</sub> epitaxial layers under forming-gas anneal. In: Materials Science and Engineering. B, 2004, vol. 109, n° 1-3, p. 113–116. doi: 10.1016/j.mseb.2003.10.060
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Article (Published version)
ISSN of the journal0921-5107

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