Scientific article
OA Policy
English

Transport properties in doped Mott insulator epitaxial La1-xTiO3+delta thin films

Published inPhysical Review. B, Condensed Matter, vol. 63, no. 16, 161103
Publication date2001
Abstract

We report on the transport properties, Hall effect and resistivity, of epitaxial La1-yTiO3+delta thin films. The materials, grown by molecular beam epitaxy, display a temperature independent Hall coefficient and a characteristic T-2 dependence of the resistivity over a wide temperature range, extending from a few Kelvin to 500 K. These transport properties are shown to be consistent with small polaron metallic conduction with a dominant optical phonon mode whose energy, (h) over bar omega (0) = 80 K, is characteristic of the tilt/rotation of the oxygen octahedra in perovskite materials.

Research groups
Citation (ISO format)
GARIGLIO, Stefano et al. Transport properties in doped Mott insulator epitaxial La1-xTiO3+delta thin films. In: Physical Review. B, Condensed Matter, 2001, vol. 63, n° 16, p. 161103. doi: 10.1103/PhysRevB.63.161103
Main files (1)
Article (Published version)
accessLevelPublic
Identifiers
ISSN of the journal1098-0121
298views
189downloads

Technical informations

Creation12/02/2019 17:36:00
First validation12/02/2019 17:36:00
Update time15/03/2023 15:45:24
Status update15/03/2023 15:45:23
Last indexation16/10/2024 15:49:29
All rights reserved by Archive ouverte UNIGE and the University of GenevaunigeBlack