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Transport properties in doped Mott insulator epitaxial La1-xTiO3+delta thin films

Published inPhysical Review. B, Condensed Matter, vol. 63, no. 16, 161103
Publication date2001
Abstract

We report on the transport properties, Hall effect and resistivity, of epitaxial La1-yTiO3+delta thin films. The materials, grown by molecular beam epitaxy, display a temperature independent Hall coefficient and a characteristic T-2 dependence of the resistivity over a wide temperature range, extending from a few Kelvin to 500 K. These transport properties are shown to be consistent with small polaron metallic conduction with a dominant optical phonon mode whose energy, (h) over bar omega (0) = 80 K, is characteristic of the tilt/rotation of the oxygen octahedra in perovskite materials.

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Citation (ISO format)
GARIGLIO, Stefano et al. Transport properties in doped Mott insulator epitaxial La<sub>1-x</sub>TiO<sub>3+delta</sub> thin films. In: Physical Review. B, Condensed Matter, 2001, vol. 63, n° 16, p. 161103. doi: 10.1103/PhysRevB.63.161103
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ISSN of the journal1098-0121
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