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English

Magneto-transport study of top- and back-gated LaAlO3/SrTiO3 heterostructures

Published inAPL Materials, vol. 3, no. 6, 062805
Publication date2015
Abstract

We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO3/SrTiO3 heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.

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Citation (ISO format)
LIU, Wei et al. Magneto-transport study of top- and back-gated LaAlO<sub>3</sub>/SrTiO<sub>3</sub> heterostructures. In: APL Materials, 2015, vol. 3, n° 6, p. 062805. doi: 10.1063/1.4921068
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ISSN of the journal2166-532X
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Creation02/11/2019 12:21:00 PM
First validation02/11/2019 12:21:00 PM
Update time03/15/2023 3:44:22 PM
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