en
Scientific article
Open access
English

Epitaxial Piezoelectric Pb(Zr0.2Ti0.8)O3 Thin Films on Silicon for Energy Harvesting Devices

Published inSmart Materials Research, vol. 2012, no. 426048
Publication date2012
Abstract

We report on the properties of ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) thin films grown epitaxially on (001) silicon and on the performance of such heterostructures for microfabricated piezoelectric energy harvesters. In the first part of the paper, we investigate the epitaxial stacks through transmission electron microscopy and piezoelectric force microscopy studies to characterize in detail their crystalline structure. In the second part of the paper, we present the electrical characteristics of piezoelectric cantilevers based on these epitaxial PZT films. The performance of such cantilevers as vibration energy transducers is compared with other piezoelectric harvesters and indicates the potential of the epitaxial approach in the field of energy harvesting devices.

Research group
Citation (ISO format)
SAMBRI, Alessia et al. Epitaxial Piezoelectric Pb(Zr<sub>0.2</sub>Ti<sub>0.8</sub>)O<sub>3</sub> Thin Films on Silicon for Energy Harvesting Devices. In: Smart Materials Research, 2012, vol. 2012, n° 426048. doi: 10.1155/2012/426048
Main files (1)
Article (Published version)
accessLevelPublic
Identifiers
ISSN of the journal2090-3561
323views
154downloads

Technical informations

Creation02/11/2019 2:22:00 PM
First validation02/11/2019 2:22:00 PM
Update time03/15/2023 3:44:21 PM
Status update03/15/2023 3:44:20 PM
Last indexation05/03/2024 7:10:16 AM
All rights reserved by Archive ouverte UNIGE and the University of GenevaunigeBlack