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Critical temperature enhancement by means of substrate-induced pressure

Authors
Perret, Joël
Fompeyrine, J.
Seo, J.W.
Mächler, E.
Locquet, J.-P.
Published in Pavuna, Davor & Bozovic, Ivan. Superconducting and Related Oxides: Physics and Nanoengineering III. San Diego - 20-24 July 1998 - Bellingham: SPIE. 1998, p. 310-316
Collection SPIE proceedings series; 3481
Abstract In the field of high-temperature superconductivity there has been no increase in the critical temperature Tc of bulk compounds since 1993. However, an analysis of the uniaxial strain or pressure derivatives of Tc in the cuprate superconductors allows us to predict that under a compressive epitaxial strain, a large increase of Tc should be possible. We demonstrate the experimental feasibility of this approach for La2-xSrxCuO4±δ (214") thin films deposited on (001)-oriented SrLaAlO4 substrates for different Sr content (0.045 ≤ x ≤ 0.11). Under epitaxial strain, a large jump of the critical temperature Tc is observed, as well as a drastic change in the resistive behavior from insulating to metallic at low temperatures.
Keywords CuprateSuperconductivityOxideThin filmsEpitaxial strain
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ISBN: 0819429368
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Proceedings chapter (Published version) (616 Kb) - document accessible for UNIGE members only Limited access to UNIGE
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PERRET, Joël et al. Critical temperature enhancement by means of substrate-induced pressure. In: Pavuna, Davor & Bozovic, Ivan (Ed.). Superconducting and Related Oxides: Physics and Nanoengineering III. San Diego. Bellingham : SPIE, 1998. p. 310-316. (SPIE proceedings series; 3481) https://archive-ouverte.unige.ch/unige:112842

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