Proceedings chapter/article (contribution published in proceedings)
English

Critical temperature enhancement by means of substrate-induced pressure

Presented atSan Diego, 20-24 July 1998
Published inPavuna, Davor & Bozovic, Ivan (Ed.), Superconducting and Related Oxides: Physics and Nanoengineering III, p. 310-316
PublisherBellingham : SPIE
Collection
  • SPIE proceedings series; 3481
Publication date1998
Abstract

In the field of high-temperature superconductivity there has been no increase in the critical temperature Tc of bulk compounds since 1993. However, an analysis of the uniaxial strain or pressure derivatives of Tc in the cuprate superconductors allows us to predict that under a compressive epitaxial strain, a large increase of Tc should be possible. We demonstrate the experimental feasibility of this approach for La2-xSrxCuO4±δ (214") thin films deposited on (001)-oriented SrLaAlO4 substrates for different Sr content (0.045 ≤ x ≤ 0.11). Under epitaxial strain, a large jump of the critical temperature Tc is observed, as well as a drastic change in the resistive behavior from insulating to metallic at low temperatures.

Keywords
  • Cuprate
  • Superconductivity
  • Oxide
  • Thin films
  • Epitaxial strain
Citation (ISO format)
PERRET, Joël et al. Critical temperature enhancement by means of substrate-induced pressure. In: Superconducting and Related Oxides: Physics and Nanoengineering III. Pavuna, Davor & Bozovic, Ivan (Ed.). San Diego. Bellingham : SPIE, 1998. p. 310–316. (SPIE proceedings series)
Main files (1)
Proceedings chapter (Published version)
accessLevelRestricted
Identifiers
  • PID : unige:112842
ISBN0819429368
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