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High-temperature spectral hole burning on Sm-doped single crystal materials of PbFCl family

Published inJournal of luminescence, vol. 64, no. 1-6, p. 173-179
Publication date1995
Abstract

Basic properties relevant to spectral hole burning (homogeneous and inhomogeneous spectral broadening, hole burning and filling mechanisms) are investigated in MeIyMeII1 − yFXIxXII1 − x: Sm2+ (Me = Ca,Sr,Ba; X = Cl,Br,I) single crystals. The relations between the spectral characteristics of 5D0,1-7F0 transitions and the material structure are described. Hole stability is investigated up to 430 K and is shown to be determined by ionic diffusion.

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JAANISO, Raivo, BILL, Hans. High-temperature spectral hole burning on Sm-doped single crystal materials of PbFCl family. In: Journal of luminescence, 1995, vol. 64, n° 1-6, p. 173–179. doi: 10.1016/0022-2313(95)00038-R
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ISSN of the journal0022-2313
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